{"title":"采用非选择性基底外延的SiGe:C hbt的传输时间","authors":"N. Zerounian","doi":"10.1109/ISDRS.2003.1272044","DOIUrl":null,"url":null,"abstract":"The transit times of SiGe:C HBTs using a non selective base epitaxy are investigated at 300 K and low temperature. The transit times depending on base boron dose and activation anneal conditions are investigated. Because the current gain strongly increases at low temperature, we can analyze dynamic performances versus temperature. We separate every charging and transit times over the temperature, in order to provide a better understanding of the 300 K behavior and to open up the road to further frequency optimization.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Transit times of SiGe:C HBTs using non selective base epitaxy\",\"authors\":\"N. Zerounian\",\"doi\":\"10.1109/ISDRS.2003.1272044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transit times of SiGe:C HBTs using a non selective base epitaxy are investigated at 300 K and low temperature. The transit times depending on base boron dose and activation anneal conditions are investigated. Because the current gain strongly increases at low temperature, we can analyze dynamic performances versus temperature. We separate every charging and transit times over the temperature, in order to provide a better understanding of the 300 K behavior and to open up the road to further frequency optimization.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transit times of SiGe:C HBTs using non selective base epitaxy
The transit times of SiGe:C HBTs using a non selective base epitaxy are investigated at 300 K and low temperature. The transit times depending on base boron dose and activation anneal conditions are investigated. Because the current gain strongly increases at low temperature, we can analyze dynamic performances versus temperature. We separate every charging and transit times over the temperature, in order to provide a better understanding of the 300 K behavior and to open up the road to further frequency optimization.
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