Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFET

Abstract

This article presents an analytical short-channel effect model without any fitting parameter for the MOSFET with insulated shallow extension (ISE). The effect of ISE structure for the highly improved short-channel effect of sub-100 nm MOSFET is demonstrated in this model. Both sidewall-oxide thickness (T/sub side/) and shallow-extension depth (X/sub e/) play the major roles in containing the short-channel effect. The short-channel threshold-voltage equation is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson's equation. Excellent agreements between the numerical simulated results and this model are obtained.