{"title":"利用聚焦离子束无掩膜制备jfet","authors":"A. J. de Marco, J. Melngailis","doi":"10.1109/ISDRS.2003.1272165","DOIUrl":null,"url":null,"abstract":"The creation of active devices utilizing solely FIB fabrication is investigated in this paper. JFETs are constructed using FIB techniques on a mesa of n-type silicon situated atop a layer of silicon dioxide. The source and drain regions are implanted using a beam of singly-charged arsenic ions accelerated to 120 kV. The gate is implanted with singly-charged boron ions at 10 kV. The source, gate, and drain contacts are directly written by FIB using a 30 kV gallium ion beam. FIB deposited platinum forms an ohmic contact to heavily doped silicon, with an average contact resistance of 9.17/spl times/10/sup -3/ /spl Omega/-cm/sup 2/. The CV characteristics of JFET with FIB-fabricated dopants and contacts are illustrated.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Maskless fabrication of JFETs via focused ion beams\",\"authors\":\"A. J. de Marco, J. Melngailis\",\"doi\":\"10.1109/ISDRS.2003.1272165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The creation of active devices utilizing solely FIB fabrication is investigated in this paper. JFETs are constructed using FIB techniques on a mesa of n-type silicon situated atop a layer of silicon dioxide. The source and drain regions are implanted using a beam of singly-charged arsenic ions accelerated to 120 kV. The gate is implanted with singly-charged boron ions at 10 kV. The source, gate, and drain contacts are directly written by FIB using a 30 kV gallium ion beam. FIB deposited platinum forms an ohmic contact to heavily doped silicon, with an average contact resistance of 9.17/spl times/10/sup -3/ /spl Omega/-cm/sup 2/. The CV characteristics of JFET with FIB-fabricated dopants and contacts are illustrated.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Maskless fabrication of JFETs via focused ion beams
The creation of active devices utilizing solely FIB fabrication is investigated in this paper. JFETs are constructed using FIB techniques on a mesa of n-type silicon situated atop a layer of silicon dioxide. The source and drain regions are implanted using a beam of singly-charged arsenic ions accelerated to 120 kV. The gate is implanted with singly-charged boron ions at 10 kV. The source, gate, and drain contacts are directly written by FIB using a 30 kV gallium ion beam. FIB deposited platinum forms an ohmic contact to heavily doped silicon, with an average contact resistance of 9.17/spl times/10/sup -3/ /spl Omega/-cm/sup 2/. The CV characteristics of JFET with FIB-fabricated dopants and contacts are illustrated.
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