{"title":"绝缘浅延伸对改善亚100nm MOSFET短沟道效应的影响","authors":"C. Shih, Yi-Min Chen, C. Lien","doi":"10.1109/ISDRS.2003.1272041","DOIUrl":null,"url":null,"abstract":"This article presents an analytical short-channel effect model without any fitting parameter for the MOSFET with insulated shallow extension (ISE). The effect of ISE structure for the highly improved short-channel effect of sub-100 nm MOSFET is demonstrated in this model. Both sidewall-oxide thickness (T/sub side/) and shallow-extension depth (X/sub e/) play the major roles in containing the short-channel effect. The short-channel threshold-voltage equation is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson's equation. Excellent agreements between the numerical simulated results and this model are obtained.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFET\",\"authors\":\"C. Shih, Yi-Min Chen, C. Lien\",\"doi\":\"10.1109/ISDRS.2003.1272041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents an analytical short-channel effect model without any fitting parameter for the MOSFET with insulated shallow extension (ISE). The effect of ISE structure for the highly improved short-channel effect of sub-100 nm MOSFET is demonstrated in this model. Both sidewall-oxide thickness (T/sub side/) and shallow-extension depth (X/sub e/) play the major roles in containing the short-channel effect. The short-channel threshold-voltage equation is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson's equation. Excellent agreements between the numerical simulated results and this model are obtained.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFET
This article presents an analytical short-channel effect model without any fitting parameter for the MOSFET with insulated shallow extension (ISE). The effect of ISE structure for the highly improved short-channel effect of sub-100 nm MOSFET is demonstrated in this model. Both sidewall-oxide thickness (T/sub side/) and shallow-extension depth (X/sub e/) play the major roles in containing the short-channel effect. The short-channel threshold-voltage equation is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson's equation. Excellent agreements between the numerical simulated results and this model are obtained.
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