Pr和Tm离子注入AlN薄膜的发光特性

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272000

W. Jadwisienczak, H. Lozykowski, A. Bensaoula, O. Monteiro

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摘要

本文报道了Pr和Tm离子注入等离子体源分子束外延生长的AlN薄膜的阴极发光和光致发光(PL)特性。为了光学激活掺杂杂质并去除离子注入引起的损伤，对重新注入的AlN样品进行了1050 /spl度/C的等时热退火处理。

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Luminescence of Pr and Tm ions implanted into AlN thin films

In this presentation, we report on the cathodoluminescence and photoluminescence (PL) properties of Pr and Tm ions implanted into AlN films grown by plasma source molecular beam epitaxy. To optically activate incorporated impurities and remove ion implantation-induced damages, the RE-implanted AlN samples were given isochronal thermal annealing treatments at a temperature of 1050 /spl deg/C in NH/sub 3/.

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International Semiconductor Device Research Symposium, 2003

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