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Photoluminescence of porous silicon under pulsed excitation 脉冲激发下多孔硅的光致发光
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425421
Z. Lukasiak, M. Murawski, W. Bala
{"title":"Photoluminescence of porous silicon under pulsed excitation","authors":"Z. Lukasiak, M. Murawski, W. Bala","doi":"10.1117/12.425421","DOIUrl":"https://doi.org/10.1117/12.425421","url":null,"abstract":"Photoluminescence time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in the wavelength range 400-850 nm in micro and nanosecond time range at different temperatures (10K-room) on anodically etched boron doped porous silicon are presented. PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. Positions of gaussian emission bands depend on temperature and change similar to thermal profile of the energy gap of the bulk silicon. PL-DC have multi exponential shape. Relaxation times depend on wavelength of the observation and temperature. At low temperature decay times dramatically increase (from few microsecond(s) at 300K to some hundred microsecond(s) ) and short component in nanosecond range has been observed. To explain our results we assumed model in which the multi barrier structure is formed by Si crystal (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well regions. Short component of decay at lowest temperatures is connected to non-radiative Auger relaxation inside porous silicon structures.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129929478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Induced-charge distribution in vertical quantum dots 垂直量子点的感应电荷分布
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425415
S. Bednarek, B. Szafran, J. Adamowski
{"title":"Induced-charge distribution in vertical quantum dots","authors":"S. Bednarek, B. Szafran, J. Adamowski","doi":"10.1117/12.425415","DOIUrl":"https://doi.org/10.1117/12.425415","url":null,"abstract":"We have studied the physical processes, which underlie the operation of a vertical quantum-dot nanodevice as a single- electron transistor. The Poisson-Schroedinger problem has been solved for the entire nanostructure. We have calculated the charge density on the quantum dot/gate electrode interface and the distribution of the ionized donors in n-GaAs layers close to the quantum-dot region. We have found that the characteristic rapid variation of the distribution of the ionized donors is responsible for the essential change of the electron confinement potential, which leads to a strong modification of the single- electron tunneling.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132828288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and photoelectrical behavior of Au/n-CdTe junctions Au/n-CdTe结的电学和光电行为
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425442
Z. Horváth, V. P. Makhniy, I. Reti, M. V. Demych, V. Van Tuyen, P. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. Horley, B. Podor
{"title":"Electrical and photoelectrical behavior of Au/n-CdTe junctions","authors":"Z. Horváth, V. P. Makhniy, I. Reti, M. V. Demych, V. Van Tuyen, P. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. Horley, B. Podor","doi":"10.1117/12.425442","DOIUrl":"https://doi.org/10.1117/12.425442","url":null,"abstract":"The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133882671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications 集成光电接收器与MSM和PIN光电探测器的高频应用
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425459
M. Tlaczala
{"title":"Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications","authors":"M. Tlaczala","doi":"10.1117/12.425459","DOIUrl":"https://doi.org/10.1117/12.425459","url":null,"abstract":"The results of investigation of PIN and MSM photo detectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photo detectors and similar photo detectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate cantent of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapor Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photo detectors and also MMIC structures with the MSM photo detector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"47 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115942525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution 硫酸溶液中Cu(111)单晶电极上沉积铜的原位STM研究
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425437
W. Polewska, M. Vogt, O. Magnussen, R. Behm
{"title":"In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution","authors":"W. Polewska, M. Vogt, O. Magnussen, R. Behm","doi":"10.1117/12.425437","DOIUrl":"https://doi.org/10.1117/12.425437","url":null,"abstract":"Results of an in-situ STM study of homoepitaxial copper electro deposition on Cu(111) in 0.01 M H2SO4 solution are presented which show a pronounced change in the growth and morphology of the deposit with increasing potential: while at - 0.40 V vs. SCE Cu multilayer growth is observed, Cu grows via a step-flow mechanism at -0.55 V. This behavior can be explained by the presence of an ordered sulfate adlayer at potentials >=-o.42 V, which causes a pronounced decrease in the Cu surface mobility.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123669126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical properties of GaN layers grown by MOCVD MOCVD生长GaN层的光学性质
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425467
R. Kudrawiec, L. Bryja, J. Misiewicz, R. Paszkiewicz, R. Korbutowicz, M. Panek, H. Paszkiewicz, M. Tlaczala
{"title":"Optical properties of GaN layers grown by MOCVD","authors":"R. Kudrawiec, L. Bryja, J. Misiewicz, R. Paszkiewicz, R. Korbutowicz, M. Panek, H. Paszkiewicz, M. Tlaczala","doi":"10.1117/12.425467","DOIUrl":"https://doi.org/10.1117/12.425467","url":null,"abstract":"The interband transitions in thin epitaxial films grown by metalorganic chemical vapour deposition (MOCVD) have been studied as a function of temperature (1 0-300K) by photoluminescence (PL) and reflectance measurements. In photoluminescence at low temperature bound and free excitons are observed. Temperature dependence of free exciton energies have been studied in reflectance measurement. In the reflectance spectra excitonic interband transitions f9V.4'7C (exciton FX(A)), f7V (upper band)JT7C (exciton FX(B)) and F7\"(lower band)I7C (exciton FX(C)) were observed. From temperature dependence of the excitonic spectra the energy gap dependence is determined using both the Varshni E(T)=E(O)-aT2/(T0+T) and Bosse-Einstein E(T)=E(O)-A/[exp(3/T)-1] expressions.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130368902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Domain structures in the perovskite-type heteroepitaxial ferroelectric thin films 钙钛矿型异质外延铁电薄膜中的畴结构
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425405
Z. Surowiak, V. Aleshin, D. Czekaj
{"title":"Domain structures in the perovskite-type heteroepitaxial ferroelectric thin films","authors":"Z. Surowiak, V. Aleshin, D. Czekaj","doi":"10.1117/12.425405","DOIUrl":"https://doi.org/10.1117/12.425405","url":null,"abstract":"Heteroepitaxial PbTiO3 and (Ba1-xSrx)TiO3 thin films were obtained by the RF sputtering method. The (100) cuts of MgO single crystals were used as substrates. The films exhibited ferroelectric properties closely similar to those of the ceramic targets. Depending on substrate temperature (Ts) with other deposition parameters constant, heteroepitaxial films of various degree of perfection of the crystalline structure were obtained. It has been found that the crystal structure of the PbTiO3//(100) MgO and (Ba1-xSrx)TiO//(100)MgO films for x<0.3 at room temperature belongs to the tetragonal system P4mm. Phase transitions in the (Ba1-xSrx)TiO3//(100)MgO films unlike those in the PbTiO3//(100)MgO films exhibited marked broadening. The domain structure of the heteroepitaxial films in comparison with that of the free ferroelectric single crystals shows certain singular features. The PbTiO3//(100)MgO films exhibit characteristic a-c-domain structure while the (Ba1-xSrx)TiO3//(100)MgO films have c-c-domain structure.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129878580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials 半导体材料中深层缺陷的低频噪声温度识别技术
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425433
J. Ćwirko, C. Przybysz, R. Cwirko, P. Kamiński
{"title":"Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials","authors":"J. Ćwirko, C. Przybysz, R. Cwirko, P. Kamiński","doi":"10.1117/12.425433","DOIUrl":"https://doi.org/10.1117/12.425433","url":null,"abstract":"The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 kHz at temperature from 77K to 350K has been described.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129213004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical measurements of strain and stress in thin films 薄膜中应变和应力的光学测量
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425439
S. Tamulevičius, L. Augulis, G. Laukaitis
{"title":"Optical measurements of strain and stress in thin films","authors":"S. Tamulevičius, L. Augulis, G. Laukaitis","doi":"10.1117/12.425439","DOIUrl":"https://doi.org/10.1117/12.425439","url":null,"abstract":"Principles and applications of the cantilever technique to measure strain and stress in thin films are presented. Different optical interferometers were created and applied to control stress-thickness dependence during technological processes or to measure two-dimensional strain distribution in thin film. An original scheme combining advantages of the classical interferometer and electronic speckle pattern interferometer is presented.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115403662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of free and strained germanium whiskers at cryogenic temperatures 低温下自由锗晶须和应变锗晶须的研究
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425418
A. Druzhinin, Irina Hortynska, I. Maryamova, E. Lavitska, M. Oszwaldowski
{"title":"Investigation of free and strained germanium whiskers at cryogenic temperatures","authors":"A. Druzhinin, Irina Hortynska, I. Maryamova, E. Lavitska, M. Oszwaldowski","doi":"10.1117/12.425418","DOIUrl":"https://doi.org/10.1117/12.425418","url":null,"abstract":"Results of the resistance studies on p-type germanium micro crystals grown in form of whiskers are presented. The crystals were brought to the vicinity of the metal-insulator transition (MIT) at liquid helium temperatures by doping with gallium and with some deep level impurities. A special technique has been developed to obtain these crystals anisotropically strained at cryogenic temperatures, so that both uniaxial tension and compression are achieved. The region adjacent to the MIT from both insulating and metallic side has been studied and some practical recommendations have been elaborated.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"4413 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131086377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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