低温下自由锗晶须和应变锗晶须的研究

A. Druzhinin, Irina Hortynska, I. Maryamova, E. Lavitska, M. Oszwaldowski
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引用次数: 4

摘要

本文介绍了以晶须形式生长的p型锗微晶体的电阻研究结果。在液氦温度下,通过掺杂镓和一些深层杂质,晶体被带到金属绝缘体转变(MIT)附近。一种特殊的技术已经被开发出来,以获得这些晶体在低温下的各向异性应变,从而实现单轴拉伸和压缩。从绝缘和金属两方面对MIT附近的区域进行了研究,并提出了一些实用的建议。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of free and strained germanium whiskers at cryogenic temperatures
Results of the resistance studies on p-type germanium micro crystals grown in form of whiskers are presented. The crystals were brought to the vicinity of the metal-insulator transition (MIT) at liquid helium temperatures by doping with gallium and with some deep level impurities. A special technique has been developed to obtain these crystals anisotropically strained at cryogenic temperatures, so that both uniaxial tension and compression are achieved. The region adjacent to the MIT from both insulating and metallic side has been studied and some practical recommendations have been elaborated.
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