International Conference on Solid State Crystals最新文献

Determining of the material parameters of ZnxCdyHg1-x-yTe by magnetophonon spectroscopy 磁声子光谱法测定ZnxCdyHg1-x-yTe材料参数

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435839

J. Cebulski, J. Polit, E. Sheregii

引用次数: 0

Dynamics of diffusion-controlled recombination of ions in ionic solutions: limits of validity of the Debye-Smoluchowski equation 离子溶液中离子的扩散控制复合动力学:Debye-Smoluchowski方程的有效性限制

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435814

K. Wolf, W. Bartczak

引用次数: 2

Possibilities and limitations of multioxide crystals growth 多氧化物晶体生长的可能性和局限性

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435832

M. Berkowski, J. Fink-Finowicki, R. Aleksiyko

{"title":"Possibilities and limitations of multioxide crystals growth","authors":"M. Berkowski, J. Fink-Finowicki, R. Aleksiyko","doi":"10.1117/12.435832","DOIUrl":"https://doi.org/10.1117/12.435832","url":null,"abstract":"The main methods of crystal growth from the melt the Czochralski and floating zone will be discussed and compared. Advantages, disadvantages and limitations of both methods as well as ways of solving some of the problems existing during growth of different types of multioxides crystals will be discussed. The chemical composition of crystals grown by the Czochralski method very often differs from the stoichiometric composition. Such deviations were found and well documented in a few groups of materials for example in garnets. Since the deviation is not known for most of the crystal, a simple way to determine the optimum starting composition of the melt will be presented. In order to determine the composition of the melt one should take into account evaporation of a volatile component that dissociates at high temperatures during crystal growth. Some problems related to the dopant distribution along the crystal growth direction in correlation with segregation coefficient for both methods will be discussed. To grow solid solution single crystal by the Czochralski method with a desired concentration of the admixture one has to know segregation coefficients of the components. A few examples of the dopant solubility limit in different crystal matrices will be presented.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127502046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Study of material behavior in DAC: system Si-O (SiOx) and compound Fe78Mn20Si2 DAC中材料行为的研究:Si-O (SiOx)体系和Fe78Mn20Si2化合物

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435808

B. Efros, N. Shishkova, A. Misiuk

引用次数: 1

Growth and dielectric properties of Ca4GdO(BO3)3 single crystals Ca4GdO(BO3)3单晶的生长和介电性能

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435861

A. Kłos, A. Pajączkowska, C. Pawlaczyk, E. Markiewicz

引用次数: 3

Molecular simulations of concentrated aqueous solutions: ionic equilibrium structures in solutions 浓水溶液的分子模拟:溶液中的离子平衡结构

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435813

W. Bartczak, Michal Zapalowski, K. Wolf

引用次数: 1

Dynamics and thermodynamics of quantum crystals near the instability point in the self-consistent phonon theory 自洽声子理论中不稳定点附近量子晶体的动力学和热力学

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435818

C. Malinowska-Adamska, P. Słoma, J. Tomaszewski

{"title":"Dynamics and thermodynamics of quantum crystals near the instability point in the self-consistent phonon theory","authors":"C. Malinowska-Adamska, P. Słoma, J. Tomaszewski","doi":"10.1117/12.435818","DOIUrl":"https://doi.org/10.1117/12.435818","url":null,"abstract":"Formally one can distinguish between the thermodynamic stability conditions and the dynamical ones. These last consists are easily formulated in the self-consistent phonon theory (SCPT) base don the thermodynamic double-time Green's function method. According to it the dynamic instability temperature Ts for a simple Bravais lattice defines the temperature at which the bound crystalline state of atoms vanishes that really means that the phonon frequencies become complex at sufficiently high temperatures T<EQTs. Using the reduced second order approximation of the SCPT the dynamics of crystal lattice and the thermodynamical properties of the quantum crystal in the vicinity of the instability point are investigated. The results of calculations of the pressure dependence of the instability temperature, melting criterion, internal and free energy, free Gibbs energy gas well as selected dynamic properties obtained with the help of the generalized form of the Buckingham, the Lennard-Jones and the Morse self-consistent potentials are given and compared with experimental data of solid hcp 4He and fcc 20Ne. Comparison of the theoretical and experimental results allows us to state that the limiting temperature of the dynamical stability obtained for the above-mentioned models pair potentials always appear to be the upper estimations of the real melting temperature.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123505525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scope of ZnO growth ZnO生长范围

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435799

R. Triboulet

引用次数: 21

Investigation of thermal annealing by gamma irradiation at room temperature in LiNbO3 crystals 室温辐照下LiNbO3晶体热退火的研究

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435826

A. Bajor, S. Kaczmarek, I. Pracka, M. Świrkowicz, T. Wrońska

{"title":"Investigation of thermal annealing by gamma irradiation at room temperature in LiNbO3 crystals","authors":"A. Bajor, S. Kaczmarek, I. Pracka, M. Świrkowicz, T. Wrońska","doi":"10.1117/12.435826","DOIUrl":"https://doi.org/10.1117/12.435826","url":null,"abstract":"An interesting phenomenon of thermal annealing in gamma irradiated undoped, and photorefractive Cu- and Fe-doped, Z- oriented LiNbO3 crystal has been observed. Prior and after each gamma irradiation the crystals were thermally annealed in the air at 800 degrees C for a couple of hours. Optical homogeneity was investigated on the entire area of LiNbO3 wafers by measuring distributions of birefringence, the principal azimuth, transmission, and parameters associated with birefringence dispersion, and also by measurements of additional absorption in a few wafers' points. It has been rather unexpectedly observed that the classical thermal annealing can lead to a decease in optical homogeneity in the majority of cases. It is attributed to generation of an internal electric field by the pyroelectric effect, and to the electrooptic effect involved thereafter. On the other hand, the secondary electrons generated by gamma irradiation are believed to increase the optical homogeneity by increasing the crystal's conductivity and dissipating this field. A uniform temperature heating across the wafer generated by this irradiation is also a helpful factor in this gamma- annealing. It has been found that this effect at room temperature by this irradiation is also a helpful factor in this gamma-annealing. It has been found that this effect at room temperature is small for gamma irradiation of 105 Gy, while increasing the doses to 106 Gy and 107 Gy can profile in a considerable reduction of the optical inhomogeneity. A certain influence of Cu-doping on this effect has also been observed.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133946619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure 高静水压力下奇克拉尔斯基生长硅中热给体形成的特性

International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435804

V. V. Emtsev, V. Emtsev, G. Oganesyan, A. Misiuk, C. A. Londos

引用次数: 2