Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure

Oxygen agglomeration processes leading to the formation of thermal donors in Czochralski grown silicon subjected to heat treatment at T equals 450 degrees C at atmospheric pressure and a high hydrostatic pressure of P equals 1 are studied. The samples investigated were doped with isoelectronic impurities of carbon and germanium. Both impurities are known to suppress the formation processes of thermal donors under normal conditions of heat treatment. It has been shown that the stress applied during heat treatment to Cz-Si with high concentrations of these impurities results in an enhanced formation of thermal donors. This effect is thought to be associated with increasing oxygen diffusivity under stress.