Possibilities and limitations of multioxide crystals growth

M. Berkowski, J. Fink-Finowicki, R. Aleksiyko
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引用次数: 2

Abstract

The main methods of crystal growth from the melt the Czochralski and floating zone will be discussed and compared. Advantages, disadvantages and limitations of both methods as well as ways of solving some of the problems existing during growth of different types of multioxides crystals will be discussed. The chemical composition of crystals grown by the Czochralski method very often differs from the stoichiometric composition. Such deviations were found and well documented in a few groups of materials for example in garnets. Since the deviation is not known for most of the crystal, a simple way to determine the optimum starting composition of the melt will be presented. In order to determine the composition of the melt one should take into account evaporation of a volatile component that dissociates at high temperatures during crystal growth. Some problems related to the dopant distribution along the crystal growth direction in correlation with segregation coefficient for both methods will be discussed. To grow solid solution single crystal by the Czochralski method with a desired concentration of the admixture one has to know segregation coefficients of the components. A few examples of the dopant solubility limit in different crystal matrices will be presented.
多氧化物晶体生长的可能性和局限性
讨论并比较了熔体生长晶体的主要方法:切克拉尔斯基生长和浮区生长。讨论了这两种方法的优点、缺点和局限性,以及解决不同类型多氧化物晶体生长过程中存在的一些问题的方法。用查克拉尔斯基法生长的晶体的化学组成常常与化学计量组成不同。这种偏差在一些材料(例如石榴石)中被发现并得到了很好的记录。由于大多数晶体的偏差是未知的,因此将提出一种确定熔体最佳起始成分的简单方法。为了确定熔体的组成,应该考虑在晶体生长过程中,在高温下解离的挥发性组分的蒸发。讨论了两种方法中掺杂物沿晶体生长方向分布与偏析系数的关系。要用理想浓度的外加剂用佐克拉尔斯基法生长固溶体单晶,必须知道各组分的偏析系数。本文将给出掺杂剂在不同晶体基质中的溶解度极限的几个例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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