{"title":"ZnO生长范围","authors":"R. Triboulet","doi":"10.1117/12.435799","DOIUrl":null,"url":null,"abstract":"The main ZnO physical properties are reviewed and some of them compared to those of GaN. As a result of these attractive properties, the various applications it could be thought of for ZnO are summarized. A critical review is then proposed of the different techniques used for the growth of bulk ZnO crystals and of ZnO epitaxial films. The result are discussed from the assessment of their structural and electrical properties. The key issue of p-type doping is finally discussed in the light of the most recent results.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Scope of ZnO growth\",\"authors\":\"R. Triboulet\",\"doi\":\"10.1117/12.435799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main ZnO physical properties are reviewed and some of them compared to those of GaN. As a result of these attractive properties, the various applications it could be thought of for ZnO are summarized. A critical review is then proposed of the different techniques used for the growth of bulk ZnO crystals and of ZnO epitaxial films. The result are discussed from the assessment of their structural and electrical properties. The key issue of p-type doping is finally discussed in the light of the most recent results.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.435799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The main ZnO physical properties are reviewed and some of them compared to those of GaN. As a result of these attractive properties, the various applications it could be thought of for ZnO are summarized. A critical review is then proposed of the different techniques used for the growth of bulk ZnO crystals and of ZnO epitaxial films. The result are discussed from the assessment of their structural and electrical properties. The key issue of p-type doping is finally discussed in the light of the most recent results.
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