{"title":"集成光电接收器与MSM和PIN光电探测器的高频应用","authors":"M. Tlaczala","doi":"10.1117/12.425459","DOIUrl":null,"url":null,"abstract":"The results of investigation of PIN and MSM photo detectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photo detectors and similar photo detectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate cantent of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapor Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photo detectors and also MMIC structures with the MSM photo detector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"47 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications\",\"authors\":\"M. Tlaczala\",\"doi\":\"10.1117/12.425459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of investigation of PIN and MSM photo detectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photo detectors and similar photo detectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate cantent of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapor Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photo detectors and also MMIC structures with the MSM photo detector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"47 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.425459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.425459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications
The results of investigation of PIN and MSM photo detectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photo detectors and similar photo detectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate cantent of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapor Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photo detectors and also MMIC structures with the MSM photo detector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.
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