International Conference on Solid State Crystals最新文献_第9页

Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors GaSb/InGaAsSb/AlGaAsSb中红外光电探测器的设计与制作

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425452

T. Piotrowski, A. Piotrowska, E. Kamińska, M. Piskorski, E. Papis-Polakowska, K. Gołaszewska, J. Kątcki, J. Ratajczak, J. Adamczewska, A. Wawro, J. Piotrowski, Z. Orman, J. Pawluczyk, Z. Nowak

{"title":"Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors","authors":"T. Piotrowski, A. Piotrowska, E. Kamińska, M. Piskorski, E. Papis-Polakowska, K. Gołaszewska, J. Kątcki, J. Ratajczak, J. Adamczewska, A. Wawro, J. Piotrowski, Z. Orman, J. Pawluczyk, Z. Nowak","doi":"10.1117/12.425452","DOIUrl":"https://doi.org/10.1117/12.425452","url":null,"abstract":"The paper reports on the design and fabrication of LPE-grown (formula available in paper) heterojunction photodetectors operating in the 2-2.4 micrometers wavelength region. Experiments on LPE growth of high-x- content quaternaries as well as optimization of device processing has been carried out. LPE growth at Tapproximately equals 530DEGC enabled obtaining lattice matched heterostructures with 19% indium in the active layer In (formula available in paper) and photodetectors with (lambda) co=2.25micrometers . By increasing the temperature of epitaxial growth to 590DEGC In (formula available in paper)heterostructures (with 23%indium content suitable for photodetectors with (lambda) co=2.35 micrometers have been obtained. Mesa-type photodiodes were fabricated by RIE in Ccl (formula available in paper) plasma and passivated electrochemically in (formula available in paper). These devices are characterized by differential resistance up to (formula available in paper) and the detectivity in the range (formula available in paper), in dependence on the photodiode active area cutoff wavelength.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115818686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Glass-ITO system as electron emitter 玻璃- ito系统作为电子发射器

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425447

J. Olesik, Z. Olesik, M. Malachowski

{"title":"Glass-ITO system as electron emitter","authors":"J. Olesik, Z. Olesik, M. Malachowski","doi":"10.1117/12.425447","DOIUrl":"https://doi.org/10.1117/12.425447","url":null,"abstract":"The thin transparent and conductive Sn doped In2O3 layers have been deposited onto both surfaces of the glass plate of dimensions 0.2x16x16 mm using the constant-current ion sputtering method. In order to study the electron emission the voltage has been applied between both the ITO layers. One of the layers was 1 micrometers thick (the field electrode) and another one (10nm and much thinner) was deposited onto the opposite surface of the glass. This thin layer was treated as the electron emitter. The polarizing voltage Upol has been applied to the field electrode. The study has been carried out in vacuum (10MIN7hPa). The multichannel analyzer of amplitude of voltage pulses created by the electron multiplier has been used in order to record the electron emission yield. Aside of the field effects the studies concerning the result of UV illumination on the photo emission monitored by field has been examined. Determined were the amplitude spectrum of the voltage pulses for various polarizing voltage. The same method was used to find the dependence of the pulse frequency n on the applied voltage Upol. The exponential dependence n = f(Upol) has been found. The field induced emission mechanism can be explained on the basis of the well known phenomena occurring in semiconductors under influence of strong electric field (the hot electron effect, the impact ionization, the Gunn effect, the tunnel effect, etc.). It was also found that additional effect at simultaneous emission of two electrons as a result of absorption of a single photon have to be taken into account. The existence of this effect has been proved by decomposition of the amplitude spectrum into Gaussians. Measurements of electron energy in the field induced emission showed that about 80% of electrons have energy up to 10 eV. Photo induced optical second harmonic (SHG) has been also observed in these films.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116830985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Investigation of nanostructured Lu2O3:Tb 纳米结构Lu2O3:Tb的研究

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425425

E. Zych, P. Derén, W. Stręk, A. Meijerink, K. Domagała, W. Mielcarek

引用次数: 6

Current instabilities in GaAs/InAs quantum dot structures GaAs/InAs量子点结构的电流不稳定性

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425420

Z. Horváth, B. Podor, P. Frigeri, S. Franchi, E. Gombia, R. Mosca, V. Van Tuyen, L. Dózsa

引用次数: 0

Influence of p-type MCT layer on junction formation during ion etching 离子腐蚀过程中p型MCT层对结形成的影响

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425455

P. Madejczyk, J. Rutkowski, W. Gawron, L. Kubiak, J. Wenus

引用次数: 1

Technology and properties of GaAlAsSb layers grown on GaSb substrates 在GaSb衬底上生长GaAlAsSb层的工艺与性能

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425407

M. Piskorski, E. Papis-Polakowska, T. Piotrowski, K. Gołaszewska, J. Kątcki, J. Ratajczak, J. Adamczewska, A. Barcz, M. Zielinski, A. Piotrowska

{"title":"Technology and properties of GaAlAsSb layers grown on GaSb substrates","authors":"M. Piskorski, E. Papis-Polakowska, T. Piotrowski, K. Gołaszewska, J. Kątcki, J. Ratajczak, J. Adamczewska, A. Barcz, M. Zielinski, A. Piotrowska","doi":"10.1117/12.425407","DOIUrl":"https://doi.org/10.1117/12.425407","url":null,"abstract":"LPE growth of Ga1-xAlxAsySb1-y on (100) GaSb substrates has been investigated for wide range of aluminum content in the melt, xAl1=0.01 - 0.06, various growth temperatures, and various amount of supersaturation. Epilayers were characterized by means of XRD, TEM, EPXMA, and SIMS. It has been found that LPE growth at Tapproximately equals 5300C produces good quality Ga1-xAlxAsySb1-y layers with Al content in the solid up to x equals0.24 and latice mismatch (delta) a/a not exceeding 5*10-4. As for the growth of higher aluminum content alloys at higher temperatures Tequals590 - 6000C, good results have been obtained unless the Al content in the melt does not exceed xAl1equals0.02 giving perfectly matched Ga1- xAlxAsySb1-y epilayers with Al content in the solid by up to x equals0.3. By introducing an interlayer, either of the lattice matched Ga0.91In0.09As0.08Sb0.92 or Ga0.70Al0.30As0.03Sb0.97, LPE growth from the melt with Al content up to xAl1equals0.06 becomes possible and enables fabrication of Ga1-xAlxAsySb1-y layers with Al content in the solid as high as xequals0.62. Ga1-xAlxAsySb1-y layers obtained from the melt with xAl1equals0.04 were characterized by lattice mismatch (Delta) a/aequals(8-9)-10-4, an increase of (Delta) a/a to 2.2*10-3 was observed for epilayers obtained from the melt with xAl1equals0.06.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116213740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Photoluminescence Fourier-IR-transmission deep-level transient spectroscopy studies of diamond layers grown by hot-filament CVD 热丝CVD生长金刚石层的光致发光傅立叶-红外传输深能级瞬态光谱研究

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425428

K. Fabisiak, A. Banaszak, Z. Lukasiak, W. Bala, M. Kaczmarski

引用次数: 0

Strain in epitaxial laterally overgrown (ELO) structures 外延横向过度生长(ELO)结构中的应变

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425413

Z. Zytkiewicz

引用次数: 1

Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes α粒子辐照对GaAs/Al0.3Ga0.7As量子阱光致发光、拉曼光谱及轻、重空穴耦合系数的影响

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425419

H. Kunert

引用次数: 0

LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions 富te溶液中Hg1-xCdxTe异质结构的LPE生长

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425410

L. Kubiak, K. Adamiec, P. Madejczyk, J. Wenus, P. Martyniuk, J. Rutkowski

引用次数: 0