{"title":"α粒子辐照对GaAs/Al0.3Ga0.7As量子阱光致发光、拉曼光谱及轻、重空穴耦合系数的影响","authors":"H. Kunert","doi":"10.1117/12.425419","DOIUrl":null,"url":null,"abstract":"The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes\",\"authors\":\"H. Kunert\",\"doi\":\"10.1117/12.425419\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.425419\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.425419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes
The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.
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