Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes

Abstract

The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.