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International Conference on Solid State Crystals最新文献

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Chromium recharging processes in the Y3Al5O12:Mg,Cr single crystal under the reducing and oxidizing annealing influence 在还原和氧化退火的影响下，Y3Al5O12:Mg,Cr单晶中铬的再充电过程
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435801
S. Ubizskii, S. Melnyk, B. Padlyak, A. Matkovskii, A. Jankowska-Frydel, Z. Frukacz
{"title":"Chromium recharging processes in the Y3Al5O12:Mg,Cr single crystal under the reducing and oxidizing annealing influence","authors":"S. Ubizskii, S. Melnyk, B. Padlyak, A. Matkovskii, A. Jankowska-Frydel, Z. Frukacz","doi":"10.1117/12.435801","DOIUrl":"https://doi.org/10.1117/12.435801","url":null,"abstract":"The influence of reducing and oxidizing annealing on optical absorption spectra of the yttrium aluminium garnet (YAG) single crystal co-doped with Mg and Cr is investigated using step-by-step isothermal and isochronous thermal treatment in H2 or air flow. The changes in the spectral were analyzed using decomposition on elementary absorption bands of Gaussian shape. The separated absorption bands attributed to the Cr4+ ions occupying octahedral and tetrahedral sites in garnet lattice demonstrate different behavior. The analysis allows to distinguish the electronic recharging process Cr4+ $ARLR Cr3+ taking place in the octahedral sites of garnet lattice and having lower activation energy from the chromium migration process Cr4+ $ARLR Cr4+ happening at higher temperatures or longer exposure. Estimations show that approximately 0. 2 percent of total number of chromium ions occupied tetrahedral sites forming phototropic centers in the YAG: Mg, Cr crystal.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Monocrystals Ag3SbS3: investigation of electrical characteristics 单晶Ag3SbS3:电学特性研究
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435827
Galina Khlyap, V. Belosertseva, L. Panchenko, M. Andrukhiv
{"title":"Monocrystals Ag3SbS3: investigation of electrical characteristics","authors":"Galina Khlyap, V. Belosertseva, L. Panchenko, M. Andrukhiv","doi":"10.1117/12.435827","DOIUrl":"https://doi.org/10.1117/12.435827","url":null,"abstract":"Electrical characteristics of metal-semiconductor structure based on monocrystals Ag3SbS3 are reported. Studies carried out at the room temperature were shown space-charge limited current caused by the peculiarities of Ag3SbS3 crystallographic structure: velocity saturation mode and ballistic regime were observed. Results of the numerical modeling of experimental data are also presented.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128163668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Very high quality crystals of wide-gap II-VI semiconductors: What for? 高质量的宽间隙II-VI半导体晶体:用于什么?
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435854
A. Mycielski, A. Szadkowski, W. Kaliszek, B. Witkowska
{"title":"Very high quality crystals of wide-gap II-VI semiconductors: What for?","authors":"A. Mycielski, A. Szadkowski, W. Kaliszek, B. Witkowska","doi":"10.1117/12.435854","DOIUrl":"https://doi.org/10.1117/12.435854","url":null,"abstract":"A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modern methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly descried. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals are shown.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121058090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer 重掺硼纳米层PtSi-Si肖特基势垒的光电特性
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425461
A. Voitsekhovskii, A. Kokhanenko, A. Korotaev, S. Nesmelov
{"title":"Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer","authors":"A. Voitsekhovskii, A. Kokhanenko, A. Korotaev, S. Nesmelov","doi":"10.1117/12.425461","DOIUrl":"https://doi.org/10.1117/12.425461","url":null,"abstract":"The photo electric characteristics of Schottky barriers, created by recoil implantation in silicon, are analyzed. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment, with current density 4-10 A/cm2 and 30-150keV energy. A SIMS analysis of obtained structures and calculation of their electric parameters show the opportunity of conducting layers formation, with a thickness of 10 nm and carrier concentration higher than 1018 cm-3.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"95 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Spin coherence and conductance modulation in mesoscopic structures 介观结构中的自旋相干和电导调制
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425416
I. Tralle
{"title":"Spin coherence and conductance modulation in mesoscopic structures","authors":"I. Tralle","doi":"10.1117/12.425416","DOIUrl":"https://doi.org/10.1117/12.425416","url":null,"abstract":"A simple theory of the quantum interference due to spin coherence and Larmor procession of the electron spin is proposed. A spin ballistic regime in a loop structure is assumed, where the phase relaxation length for the spin part of the wave function (Lphi(e)) is much greater than the relaxation length for the orbital part (Lphi(s)). In the presence of additional magnetic field, the spin part of the electron's wave function acquires a phase shift due to additional spin precession about that field. If also the structure length L is chosen such that (formula available in paper), it is possible to wash out the quantum interference related to the phase coherence of the orbital part of the wave function, retaining at the same time that related to the phase coherence of the spin part, to reveal the corresponding conductance oscillations. It is also emphasized that strong modulation of the conductance of the structure could be achieved in this way.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115102426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the strain layers in multiple quantum wells by magnetophonon resonance 磁声子共振研究多量子阱中的应变层
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425440
G. Tomaka, E. Sheregii, J. Cebulski, W. Ściuk, W. Strupinski, L. Dobrzański
{"title":"Investigation of the strain layers in multiple quantum wells by magnetophonon resonance","authors":"G. Tomaka, E. Sheregii, J. Cebulski, W. Ściuk, W. Strupinski, L. Dobrzański","doi":"10.1117/12.425440","DOIUrl":"https://doi.org/10.1117/12.425440","url":null,"abstract":"Magnetophonon Resonance in parallel transport of three types of Multiple Quantum Wells was studied. They consisted of ten QW of GaAs and ten AlGaAs barriers, and were obtained by the Metal Organic Vapor Deposition an semi-insulating GaAs. The MPR research were performed in pulsed magnetic fields up to 30 T. The transverse magneto resistance was measured between 77K and 340K and the MPR oscillations extracted by subtracting a voltage linear in magnetic field. The oscillating part of magneto resistance (Delta) (rho) xx was recorded. A fine structure of MPR peaks was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TINSEL: a new effect observed in waveguiding organic material 金属丝:在波导有机材料中观察到的一种新效应
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425464
A. Lewanowicz
{"title":"TINSEL: a new effect observed in waveguiding organic material","authors":"A. Lewanowicz","doi":"10.1117/12.425464","DOIUrl":"https://doi.org/10.1117/12.425464","url":null,"abstract":"2-(2'-hydroxy-5'-methylphenyl)-5-chlorobenzotriazole (TINCl) compound belongs to class of compounds in which after UV excitation intra-molecular proton transfer reaction takes place in solid state at room temperature. Newly created proton- transferred form flouresces in the red range of the spectrum. Microscopic study of micrometer size flourescing crystals gives an opportunity to observe guiding and amplification of spontaneously emitted light. Maximum of light traveling along the crystal is shifted towards high-energy range. We called this transfer in needle of spontaneously emitted luminescence as TINSEL effect. Taking into account the total internal reflection phenomenon, qualitative explanation of TINSEL effect was done. TINSEL gives new possibility of application TINCl as homogeneous core fiber.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126414443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress-induced effects in semiconducting epitaxial layers 半导体外延层中的应力诱导效应
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425443
J. Bąk-Misiuk, J. Domagała, A. Misiuk, J. Kaniewski, J. Adamczewska, J. Trela, K. Reginski, D. Dobosz, M. Prujszczyk, J. Tedenac
{"title":"Stress-induced effects in semiconducting epitaxial layers","authors":"J. Bąk-Misiuk, J. Domagała, A. Misiuk, J. Kaniewski, J. Adamczewska, J. Trela, K. Reginski, D. Dobosz, M. Prujszczyk, J. Tedenac","doi":"10.1117/12.425443","DOIUrl":"https://doi.org/10.1117/12.425443","url":null,"abstract":"The effect of high temperature-high pressure (HT-HP) treatment of semiconducting layers on their structural properties was investigated by X-ray methods. The changes of the strain state of the samples induced by the HT-HP treatment depend on the initial strain state and growth method of thin layers. Only for the layers obtained by MBE methods the change of strain state of layers was found. Decrease of the dislocation density was detected for relaxed InAs/GaAs layers after the treatment at 673K - 1.1 Gpa for 1 h. For strained AlGaAs/GaAs samples the pressure - induces stress is responsible for creation of dislocation.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130151420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method 脉冲激光烧蚀法生长PbSe/Si层的x射线表征
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425429
R. Rumianowski, R. Dygdala, W. Bala, Jaroslaw Sylwisty
{"title":"X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method","authors":"R. Rumianowski, R. Dygdala, W. Bala, Jaroslaw Sylwisty","doi":"10.1117/12.425429","DOIUrl":"https://doi.org/10.1117/12.425429","url":null,"abstract":"PbSe thin layers were grown by pulsed laser deposition. The layers were obtained on Si substrates at temperature 45K to 650K. The structure of the layers and its lattice parameters were estimated from the X-ray diffraction measurements. The strong intensity of (200)-PbSe peak indicates a self-texture preference in the c-axis direction.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130689372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Pseudobinary Cd1-xPbxSe thin films 伪二元Cd1-xPbxSe薄膜
International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI: 10.1117/12.425434
G. Shahane, R. N. Mulik, D. S. Sutrave, L. Deshmukh
{"title":"Pseudobinary Cd1-xPbxSe thin films","authors":"G. Shahane, R. N. Mulik, D. S. Sutrave, L. Deshmukh","doi":"10.1117/12.425434","DOIUrl":"https://doi.org/10.1117/12.425434","url":null,"abstract":"Cd1-4PbxSe thin films with 0DEGC, in an alkaline medium (pH equals 11) and studied through the structural, optical and electrical transport properties. X- ray diffraction studies revealed that pure CdSe exists in both hexagonal and cubic phase structures whereas PbSe is only cubic. The interplanar distance, d, changed from 3.528 A0 to 3.580 A0 for the change of x from 0 to 0.2 showing the formation of an alloy in 0aSigma'S), carrier concentration (n), carrier mobility ((mu) ) and the intergrain barrier potential ((Phi) B) were estimated from the above data and their variation with the temperature and film composition have been studied.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127896324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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