Galina Khlyap, V. Belosertseva, L. Panchenko, M. Andrukhiv
{"title":"单晶Ag3SbS3:电学特性研究","authors":"Galina Khlyap, V. Belosertseva, L. Panchenko, M. Andrukhiv","doi":"10.1117/12.435827","DOIUrl":null,"url":null,"abstract":"Electrical characteristics of metal-semiconductor structure based on monocrystals Ag3SbS3 are reported. Studies carried out at the room temperature were shown space-charge limited current caused by the peculiarities of Ag3SbS3 crystallographic structure: velocity saturation mode and ballistic regime were observed. Results of the numerical modeling of experimental data are also presented.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monocrystals Ag3SbS3: investigation of electrical characteristics\",\"authors\":\"Galina Khlyap, V. Belosertseva, L. Panchenko, M. Andrukhiv\",\"doi\":\"10.1117/12.435827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical characteristics of metal-semiconductor structure based on monocrystals Ag3SbS3 are reported. Studies carried out at the room temperature were shown space-charge limited current caused by the peculiarities of Ag3SbS3 crystallographic structure: velocity saturation mode and ballistic regime were observed. Results of the numerical modeling of experimental data are also presented.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.435827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monocrystals Ag3SbS3: investigation of electrical characteristics
Electrical characteristics of metal-semiconductor structure based on monocrystals Ag3SbS3 are reported. Studies carried out at the room temperature were shown space-charge limited current caused by the peculiarities of Ag3SbS3 crystallographic structure: velocity saturation mode and ballistic regime were observed. Results of the numerical modeling of experimental data are also presented.