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Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth Cz硅晶体生长过程中本征点缺陷行为的二维模型
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435807
A. I. Prostomolotov, N. Verezub
{"title":"Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth","authors":"A. I. Prostomolotov, N. Verezub","doi":"10.1117/12.435807","DOIUrl":"https://doi.org/10.1117/12.435807","url":null,"abstract":"2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115132289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nonlinear optical properties in ZnSe crystals ZnSe晶体的非线性光学性质
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435856
B. Derkowska, B. Sahraoui, X. Nguyen Phu, W. Bala
{"title":"Nonlinear optical properties in ZnSe crystals","authors":"B. Derkowska, B. Sahraoui, X. Nguyen Phu, W. Bala","doi":"10.1117/12.435856","DOIUrl":"https://doi.org/10.1117/12.435856","url":null,"abstract":"The two photon absorption coefficient and third order nonlinear optical susceptibility of ZnSe crystals were investigated using the transmission and degenerate four wave mixing methods. The experimental results show that imaginary part of third order nonlinear optical susceptibility decrease with increase of free carriers and the absolute value of third order nonlinear optical susceptibility increase with increase of free electron concentration.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129437141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Al-Cu-Co single quasi-crystals obtained by the method of inclined front crystallization 斜锋结晶法制备了Al-Cu-Co单晶准晶体
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435871
W. Bogdanowicz, Z. Bojarski
{"title":"Al-Cu-Co single quasi-crystals obtained by the method of inclined front crystallization","authors":"W. Bogdanowicz, Z. Bojarski","doi":"10.1117/12.435871","DOIUrl":"https://doi.org/10.1117/12.435871","url":null,"abstract":"An Al-Cu-Co alloy was obtained by the inclined front of crystallization method. During crystallization the alloy delaminated into three layers, two of which were single decagonal quasicrystals of different orientations and the third one was a mixture of two phase. The first quasi crystalline layer was formed in a peritectic reaction of an earlier crated single crystalline layer of an approximant, the second-grew directly from liquid. With the use of X-ray topography it was found that the planes of both quasicrystals are rotated of about 1 degree against each other.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"56 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123181896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simple models for crystallization processes 结晶过程的简单模型
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435815
D. de Cogan, L. Martin
{"title":"Simple models for crystallization processes","authors":"D. de Cogan, L. Martin","doi":"10.1117/12.435815","DOIUrl":"https://doi.org/10.1117/12.435815","url":null,"abstract":"Cellular Automation modeling the repeated application of simple rules can result in very complex behavior and is being increasingly used to simulate physical process. This paper outlines the technique with special emphasis on ordered states and order/disorder transitions.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"18 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123737204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of mechanical stress on the growth of crystals 机械应力对晶体生长的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435810
J. Sherwood
{"title":"Influence of mechanical stress on the growth of crystals","authors":"J. Sherwood","doi":"10.1117/12.435810","DOIUrl":"https://doi.org/10.1117/12.435810","url":null,"abstract":"A review is presented of the author's rece4nt work on the influence of mechanical stress on the growth rate of materials. On the basis of the results, it is proposed that growth rate dispersion of secondary nuclei arises asa result of competition between stress reduction and dislocation enhancement of growth rates in the developing particles, with the former being the major influence at low particle sizes. The results are shown to account for the particle size and material dependence of the dispersion. Mechanistic studies suggest that the principal mechanism of stress reduction in growth rate is the influence of the applied stress on the surface free energy of the crystal. This effects both nucleation at the growth center and the migration of growth steps across the crystal surface.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113985698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor surface characterization by scanning probe microscopies 用扫描探针显微镜表征半导体表面
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435824
M. Hietschold, Anne D. Mueller, Falk Mueller
{"title":"Semiconductor surface characterization by scanning probe microscopies","authors":"M. Hietschold, Anne D. Mueller, Falk Mueller","doi":"10.1117/12.435824","DOIUrl":"https://doi.org/10.1117/12.435824","url":null,"abstract":"Besides the well-known 3D surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunneling spectroscopy (STS) and scanning electrical force microscopy/spectroscopy. In this paper, we compare the wide-spread UHV-STM/STS technique with ambient SEFM/SEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130980777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation 氮化镓中Mg受体的热电离能:掺杂水平和补偿的影响
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435848
B. Podor
{"title":"Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation","authors":"B. Podor","doi":"10.1117/12.435848","DOIUrl":"https://doi.org/10.1117/12.435848","url":null,"abstract":"It is shown that the thermal ionization energy of Mg acceptors in GaN, as determined by temperature dependent Hall effect measurements, exhibits the usual dependence on the concentration of ionized impurities, as seen in many other semiconductors. The observed difference in the thermal and optical ionization energies of Mg acceptors can be quantitatively understood based on a simple electrostatic interaction model.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131058118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Investigation of as-grown nitrogen-doped Czochralski silicon 生长态氮掺杂Czochralski硅的研究
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435811
Deren Yang, Jinggang Lu, Yijun Shen, D. Tian, Xiangyang Ma, Liben Li, D. Que
{"title":"Investigation of as-grown nitrogen-doped Czochralski silicon","authors":"Deren Yang, Jinggang Lu, Yijun Shen, D. Tian, Xiangyang Ma, Liben Li, D. Que","doi":"10.1117/12.435811","DOIUrl":"https://doi.org/10.1117/12.435811","url":null,"abstract":"Two Czochralski (CZ) silicon ingots, named NCZ and ACZ silicon, were grown under the same procedure in nitrogen and an argon atmosphere respectively. The experiments reveal that nitrogen was doped into the silicon ingot and N-O complexes were generated during the crystal growth, while it was grown in a nitrogen atmosphere. The nitrogen concentration profile in the NCZ silicon ingot indicates that the nitrogen concentration in the wafer edges was less than that in the center. It is also found that the as-grown oxygen-thermal donors were almost the same. Furthermore, it is discovered that the profile of phosphorus concentration in NCZ silicon was also the same as that in ACZ silicon. It is considered that compared with argon atmosphere, nitrogen atmosphere ha no influence on the evaporation rates of phosphorus from melting silicon.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131195791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crystal field study of Gd3+-doped LaxRE1-xF3 (RE = Ce,Pr,Nd) single crystals Gd3+掺杂LaxRE1-xF3 (RE = Ce,Pr,Nd)单晶的晶体场研究
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435834
M. L. Paradowski, L. Misiak, W. Korczak, Z. Korczak
{"title":"Crystal field study of Gd3+-doped LaxRE1-xF3 (RE = Ce,Pr,Nd) single crystals","authors":"M. L. Paradowski, L. Misiak, W. Korczak, Z. Korczak","doi":"10.1117/12.435834","DOIUrl":"https://doi.org/10.1117/12.435834","url":null,"abstract":"The mixed LaxRE1-xF3 single crystal doped with Gd3+ were grown by a modified Bridgmann- Stockbarger method. The crystal field was investigated using electron paramagnetic resonance technique. The angular dependencies of Gd3+ line positions with magnetic field oriented in plane were measured in the temperature range 4.2-295 K. The surroundings of Gd3+ ions were investigated analyzing spin-Hamiltonian parameters in the light of the superposition model. The small distortion of the D43D trigonal symmetry has been observed in LaF3, La0.9Ce0.1F3 and La0.9Nd0.1F3 below 150K. The local structure deformation of the site symmetry of Dg3+ ions induced by temperature starts at about 150K becoming larger at 4.2K. In PrF3 the distortion was not observed in the temperature range 4.2- 295K. The results were compared with those of Gd3+- doped LiYF4 crystals.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132659626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Transient surface supersaturation after crystal submersion: II 晶体浸没后的瞬态表面过饱和
International Conference on Solid State Crystals Pub Date : 2001-08-10 DOI: 10.1117/12.435816
M. Rak
{"title":"Transient surface supersaturation after crystal submersion: II","authors":"M. Rak","doi":"10.1117/12.435816","DOIUrl":"https://doi.org/10.1117/12.435816","url":null,"abstract":"In our earlier papers, we solved the time-dependent equation of Burton, Cabrera and Frank for transient state conditions occurring immediately after submersion of a crystal surface in supersaturated solution. As a result, the expression for the transient surface supersaturation was found and discussed. In this paper we present an approximation of that expression. The approximation enables a simple estimation of the time required to attain the steady-state value of the surface supersaturation.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116134242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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