{"title":"Cz硅晶体生长过程中本征点缺陷行为的二维模型","authors":"A. I. Prostomolotov, N. Verezub","doi":"10.1117/12.435807","DOIUrl":null,"url":null,"abstract":"2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth\",\"authors\":\"A. I. Prostomolotov, N. Verezub\",\"doi\":\"10.1117/12.435807\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.435807\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth
2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.
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