Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth

Abstract

2D mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The result of its verification are compared with the data of the 1D model supposing the 'fast' vacancies and interstitial recombination near the liquid-solid interface. For various growth conditions and with use of the calculated 2D temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.