L. Kubiak, K. Adamiec, P. Madejczyk, J. Wenus, P. Martyniuk, J. Rutkowski
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引用次数: 0
摘要
介绍了在半绝缘(111)CdZnTe衬底上成功制备长波Hg1-yCdyTe/Hg1-xCdxTe异质结构(Y$GTRx)的方法。该异质结构在10 ~ 15微米厚的n型HgCdTe涂层上形成2 ~ 5微米的薄层。提出了一种在富te溶液中进行碲化汞镉液相外延生长的新型倾倒船。采用显微检查、红外透射、扫描电镜等方法对双层异质结构进行表征。在77 ~ 300 K的温度范围内，采用Van der Pauw排列测量了电性能。通过优化生长参数和石墨船的结构，可以获得高质量的、相对突变的Hg1-xCdxTe异质结构。
LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions
The successful fabrication of long wavelength Hg1-yCdyTe/Hg1-xCdxTe heterostructures (Y$GTRx) on semi- insulating (111)CdZnTe substrates is presented. The heterostructures consist of a thin 2-5 micrometers layer on n-type 10- 15 micrometers thick HgCdTe epilayer. A novel tipping boat for liquid phase epitaxial growth of mercury cadmium telluride from Te-rich solutions has been proposed. The characterization of double- layer heterostructures was carried out using different methods: microscopic examinations, infrared microscopic transmission, and scanning electron microscopic measurements. Electrical properties were measured in temperature range of 77-300 K using the Van der Pauw arrangement. By optimizing the growth parameters and the construction of graphite boat it was possible to obtain high quality, relatively abrupt Hg1-xCdxTe heterostructures.
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