Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI:10.1117/12.425452

T. Piotrowski, A. Piotrowska, E. Kamińska, M. Piskorski, E. Papis-Polakowska, K. Gołaszewska, J. Kątcki, J. Ratajczak, J. Adamczewska, A. Wawro, J. Piotrowski, Z. Orman, J. Pawluczyk, Z. Nowak

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引用次数: 7

Abstract

The paper reports on the design and fabrication of LPE-grown (formula available in paper) heterojunction photodetectors operating in the 2-2.4 micrometers wavelength region. Experiments on LPE growth of high-x- content quaternaries as well as optimization of device processing has been carried out. LPE growth at Tapproximately equals 530DEGC enabled obtaining lattice matched heterostructures with 19% indium in the active layer In (formula available in paper) and photodetectors with (lambda) co=2.25micrometers . By increasing the temperature of epitaxial growth to 590DEGC In (formula available in paper)heterostructures (with 23%indium content suitable for photodetectors with (lambda) co=2.35 micrometers have been obtained. Mesa-type photodiodes were fabricated by RIE in Ccl (formula available in paper) plasma and passivated electrochemically in (formula available in paper). These devices are characterized by differential resistance up to (formula available in paper) and the detectivity in the range (formula available in paper), in dependence on the photodiode active area cutoff wavelength.

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GaSb/InGaAsSb/AlGaAsSb中红外光电探测器的设计与制作

本文报道了在2-2.4微米波长范围内工作的lpe生长异质结光电探测器的设计和制造。对高x含量季铵盐的LPE生长进行了实验研究，并对器件工艺进行了优化。LPE在t约等于530DEGC的条件下生长，使得在活性层in中获得了含有19%铟的晶格匹配异质结构(公式可在纸上找到)和(λ) co=2.25微米的光电探测器。将外延生长温度提高到590℃，得到了铟含量为23%的异质结构，适合于co=2.35微米的光电探测器。采用RIE法在Ccl等离子体中制备了台面型光电二极管(配方见纸)，并在(配方见纸)中进行了电化学钝化。这些器件的特点是差分电阻高达(可在纸上找到的公式)和探测范围(可在纸上找到的公式)，依赖于光电二极管的有效区域截止波长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Conference on Solid State Crystals

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