Influence of p-type MCT layer on junction formation during ion etching

Abstract

The material used throughout this study was Mercury Cadmium Telluride (MCT) grown by liquid phase epitaxy (LPE). Due to its special physical and electrical properties, MCT is still one of the most important infrared materials. That's why we are looking for the ways of improving technology and processing and then extracting the best of this material. This article concerns the influence of p-type MCT layer on junction formation during ion etching. To achieve device quality p-type layers, a lot of experiments were performed with annealing of as-grown wafers or adding different quantity of As to the melt. The technological problems with activation of arsenic and with ion etching are shown. Adjusting of parameters of annealing and etching processes allows n-on-p junctions to be formed with a controllable electrical profile. Standard techniques were used to determine optical and electrical parameters of layers.