半导体材料中深层缺陷的低频噪声温度识别技术

International Conference on Solid State Crystals Pub Date : 2001-04-17 DOI:10.1117/12.425433

J. Ćwirko, C. Przybysz, R. Cwirko, P. Kamiński

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引用次数: 0

摘要

低温噪声技术是研究半导体材料中深层杂质的有力工具。从噪声数据中可以识别出深层缺陷的物理参数。描述了在温度77K至350K范围内测量频率范围为0.01 kHz的低噪声光谱的测量系统。

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Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials

The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 kHz at temperature from 77K to 350K has been described.

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International Conference on Solid State Crystals

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