Z. Horváth, V. P. Makhniy, I. Reti, M. V. Demych, V. Van Tuyen, P. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. Horley, B. Podor
{"title":"Au/n-CdTe结的电学和光电行为","authors":"Z. Horváth, V. P. Makhniy, I. Reti, M. V. Demych, V. Van Tuyen, P. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. Horley, B. Podor","doi":"10.1117/12.425442","DOIUrl":null,"url":null,"abstract":"The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and photoelectrical behavior of Au/n-CdTe junctions\",\"authors\":\"Z. Horváth, V. P. Makhniy, I. Reti, M. V. Demych, V. Van Tuyen, P. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. Horley, B. Podor\",\"doi\":\"10.1117/12.425442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.425442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.425442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and photoelectrical behavior of Au/n-CdTe junctions
The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.