In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution

W. Polewska, M. Vogt, O. Magnussen, R. Behm
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引用次数: 1

Abstract

Results of an in-situ STM study of homoepitaxial copper electro deposition on Cu(111) in 0.01 M H2SO4 solution are presented which show a pronounced change in the growth and morphology of the deposit with increasing potential: while at - 0.40 V vs. SCE Cu multilayer growth is observed, Cu grows via a step-flow mechanism at -0.55 V. This behavior can be explained by the presence of an ordered sulfate adlayer at potentials >=-o.42 V, which causes a pronounced decrease in the Cu surface mobility.
硫酸溶液中Cu(111)单晶电极上沉积铜的原位STM研究
在0.01 M H2SO4溶液中对Cu(111)上的同外延铜电沉积进行了原位STM研究,结果表明,随着电位的增加,铜的生长和形貌发生了明显的变化:与SCE相比,在- 0.40 V时,Cu可以多层生长,而在-0.55 V时,Cu通过阶梯流动机制生长。这种行为可以解释为在电位>=- 0.42处存在有序的硫酸盐层V,导致Cu表面迁移率显著降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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