{"title":"硫酸溶液中Cu(111)单晶电极上沉积铜的原位STM研究","authors":"W. Polewska, M. Vogt, O. Magnussen, R. Behm","doi":"10.1117/12.425437","DOIUrl":null,"url":null,"abstract":"Results of an in-situ STM study of homoepitaxial copper electro deposition on Cu(111) in 0.01 M H2SO4 solution are presented which show a pronounced change in the growth and morphology of the deposit with increasing potential: while at - 0.40 V vs. SCE Cu multilayer growth is observed, Cu grows via a step-flow mechanism at -0.55 V. This behavior can be explained by the presence of an ordered sulfate adlayer at potentials >=-o.42 V, which causes a pronounced decrease in the Cu surface mobility.","PeriodicalId":365405,"journal":{"name":"International Conference on Solid State Crystals","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution\",\"authors\":\"W. Polewska, M. Vogt, O. Magnussen, R. Behm\",\"doi\":\"10.1117/12.425437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of an in-situ STM study of homoepitaxial copper electro deposition on Cu(111) in 0.01 M H2SO4 solution are presented which show a pronounced change in the growth and morphology of the deposit with increasing potential: while at - 0.40 V vs. SCE Cu multilayer growth is observed, Cu grows via a step-flow mechanism at -0.55 V. This behavior can be explained by the presence of an ordered sulfate adlayer at potentials >=-o.42 V, which causes a pronounced decrease in the Cu surface mobility.\",\"PeriodicalId\":365405,\"journal\":{\"name\":\"International Conference on Solid State Crystals\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Solid State Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.425437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Solid State Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.425437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
在0.01 M H2SO4溶液中对Cu(111)上的同外延铜电沉积进行了原位STM研究，结果表明，随着电位的增加，铜的生长和形貌发生了明显的变化:与SCE相比，在- 0.40 V时，Cu可以多层生长，而在-0.55 V时，Cu通过阶梯流动机制生长。这种行为可以解释为在电位>=- 0.42处存在有序的硫酸盐层V，导致Cu表面迁移率显著降低。
In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution
Results of an in-situ STM study of homoepitaxial copper electro deposition on Cu(111) in 0.01 M H2SO4 solution are presented which show a pronounced change in the growth and morphology of the deposit with increasing potential: while at - 0.40 V vs. SCE Cu multilayer growth is observed, Cu grows via a step-flow mechanism at -0.55 V. This behavior can be explained by the presence of an ordered sulfate adlayer at potentials >=-o.42 V, which causes a pronounced decrease in the Cu surface mobility.
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