Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)最新文献

Use of the Myers-Briggs type indicator in an undergraduate microelectronics course 在本科微电子课程中使用Myers-Briggs类型指标

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225715

R. E. Pearson, A. Bell, J.R. Croley

引用次数: 3

Fabrication of an MOS Capacitor structure at NGEE ANN POLYTECHNIC's IC fabrication facility 在NGEE ANN POLYTECHNIC的IC制造设施中制造MOS电容器结构

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225755

M. Philip

引用次数: 0

In-situ depth monitoring of the deep reactive ion etch process 深反应离子蚀刻过程的现场深度监测

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225775

Y. Imura, B.X. Li, K. Farmer

引用次数: 1

A 435 MHz high-gain low-power LNA in 0.35 /spl mu/m SOI CMOS 在0.35 /spl mu/m SOI CMOS中的435 MHz高增益低功耗LNA

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225709

D. Huang, E. Zencir, N. Dogan, E. Arvas

引用次数: 0

SU-8 as an electron beam lithography resist SU-8作为电子束光刻抗蚀剂

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225696

F. Williamson, E. Shields

{"title":"SU-8 as an electron beam lithography resist","authors":"F. Williamson, E. Shields","doi":"10.1109/UGIM.2003.1225696","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225696","url":null,"abstract":"SU-8 resist is an epoxy resin dissolved with a photoinitiator in an organic solvent. The result is a negative resist originally developed for high aspect ratio MEMS applications. For some applications SU-8 has several advantages over the most commonly used e-beam resist, PMMA, which include a much higher sensitivity and increased chemical and mechanical robustness. We have used our Raith 150 electron beam lithography tool to investigate SU-8 in two different applications. First, we investigated the properties of a specially formulated SU-8 which can be spun as thin as /spl sim/100 nm. This is much thinner than normal formulations but necessary for high-resolution lithography. We then exposed an array of single pixel lines with a pitch of 200 nm. At a dose of 30 pC/cm we obtained a line width of /spl sim/60 nm. Second, using standard formulations of SU-8, we discovered that films as thick as 8 microns can be exposed with a 30 kV electron beam, the maximum of our system. Using the contrast curve as a calibration reference, we were able to make analog three-dimensional structures by spatially varying the dose as the feature is being written. With this technique we fabricated a 3/spl times/3 array of f/9 spherical lenses.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129030357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Overview of fully depleted silicon-on-insulator (SOI) technology 绝缘体上全贫硅(SOI)技术综述

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225771

P. T. Tran

引用次数: 2

An electronic wafer traveler system for an academic microchip fabrication facility 用于学术微芯片制造设备的电子晶圆移动系统

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225774

A. Sheikh, S. Sheetz, R. Hendricks

{"title":"An electronic wafer traveler system for an academic microchip fabrication facility","authors":"A. Sheikh, S. Sheetz, R. Hendricks","doi":"10.1109/UGIM.2003.1225774","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225774","url":null,"abstract":"Even in a university microchip fabrication facility, the process by which bare silicon wafers are transformed into wafers with working devices consists of a complex sequence involving many steps, each of which must be performed by the students precisely as designed by the instructor. In order to assure such processing conformance, each wafer is accompanied by a \"wafer traveler\" that tells the student exactly what to do. These travelers have historically been paper documents. In an attempt to model modern commercial fabrication facilities, and in order to provide electronic data to the students for use in their laboratory reports, we are developing an electronic wafer traveler system (EWTS). This system accomplished two main user functions. First, it allows instructors to develop wafer travelers specific to a given process flow, and second, it produces wafer travelers for that process that will allow students to electronically record and use all data associated with fabricating a wafer by the given process. This paper presents the design of the EWTS using advanced object-oriented software engineering techniques such as use case modeling to show how users interact with the system and class diagramming that shows the structural relationships among data elements as required by the Unified Modeling Language (UML). The resulting third normal form data model will be implemented in SQL 2000 and interfaced to the existing laboratory information management system (LIMS) now in use in our facility. User interaction with the EWTS will be via Visual Basic and Active Server pages using SQL.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130236363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Application for WLP at positive working photosensitive polybenzoxazole WLP在正极工作光敏聚苯并恶唑中的应用

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.2494/PHOTOPOLYMER.15.173

T. Hirano, K. Yamamoto, K. Imamura

引用次数: 8

Development of robust analog electronics at the University of Tennessee for NASA/JPL extreme environment applications 在田纳西大学为NASA/JPL极端环境应用开发强大的模拟电子设备

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225711

S. Terry, B. Blalock, J. Jackson, Suheng Chen, M. Mojarradi, E. Kolawa

引用次数: 9

Quest for the ultimate sub-50 nm CMOS transistor structure 探索最终的低于50纳米的CMOS晶体管结构

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI: 10.1109/UGIM.2003.1225730

A. Rambhatla, D. Hackler, S. Parke

引用次数: 0