A 435 MHz high-gain low-power LNA in 0.35 /spl mu/m SOI CMOS

Abstract

A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.