在0.35 /spl mu/m SOI CMOS中的435 MHz高增益低功耗LNA

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225709

D. Huang, E. Zencir, N. Dogan, E. Arvas

{"title":"在0.35 /spl mu/m SOI CMOS中的435 MHz高增益低功耗LNA","authors":"D. Huang, E. Zencir, N. Dogan, E. Arvas","doi":"10.1109/UGIM.2003.1225709","DOIUrl":null,"url":null,"abstract":"A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 435 MHz high-gain low-power LNA in 0.35 /spl mu/m SOI CMOS\",\"authors\":\"D. Huang, E. Zencir, N. Dogan, E. Arvas\",\"doi\":\"10.1109/UGIM.2003.1225709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.\",\"PeriodicalId\":356452,\"journal\":{\"name\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UGIM.2003.1225709\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.2003.1225709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

设计并测试了一种采用0.35 -/spl mu/m SOI CMOS技术的低功耗、高增益、全差分低噪声放大器(LNA)。LNA用于在UHF频率下用作子采样接收器的放大级。首次报道了测量到的46 db小信号增益、3 db噪声系数和19 mw总功耗。

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A 435 MHz high-gain low-power LNA in 0.35 /spl mu/m SOI CMOS

A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.

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Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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