深反应离子蚀刻过程的现场深度监测

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225775

Y. Imura, B.X. Li, K. Farmer

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引用次数: 1

摘要

我们描述了一种基于激光的技术来监测硅的时间复用深度反应离子蚀刻。使用单一激光束系统可以同时提取掩模和衬底蚀刻速率以及掩模质量信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-situ depth monitoring of the deep reactive ion etch process

We describe a laser-based technique to monitor the time multiplexed deep reactive ion etching of silicon. Mask and substrate etch rates, as well as mask quality information, can be extracted simultaneously and in-situ using a single laser beam system.

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Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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