在NGEE ANN POLYTECHNIC的IC制造设施中制造MOS电容器结构

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225755

M. Philip

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引用次数: 0

摘要

本文描述了在NGEE ANN理工学院建立和测试MOS电容器结构的尝试。这个项目是由一群学生承担的。提供了所使用的工艺流程和测试策略的细节。报告遇到的问题和采取的解决办法。评估练习对学生学习的影响。

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Fabrication of an MOS Capacitor structure at NGEE ANN POLYTECHNIC's IC fabrication facility

This paper describes an attempt to build and test MOS Capacitor structures at NGEE ANN POLYTECHNIC. This project was undertaken by a group of students. Details of the process flow and test strategies utilized are provided. Problems encountered and solutions taken are reported. The impact of the exercise on student learning is assessed.

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Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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