{"title":"Semiconductor Process and Device Modeling: a graduate course/undergraduate elective in microelectronic engineering at RIT","authors":"K. Hirschman, J. Hebding, R. Saxer, K. Tabakman","doi":"10.1109/UGIM.2003.1225714","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225714","url":null,"abstract":"Semiconductor Process and Device Modeling is a senior/graduate level course on the application of simulation tools for design and verification of microelectronic processes and operation of semiconductor devices. The goal of the course is to provide a more in-depth understanding of complex processes and device physics through the use of simulation tools. Silvaco-SUPREM (Athena/Atlas) is the primary process and device simulation tool used throughout the course. The course explores the various models that are used for front-end silicon processes, emphasizing the importance of complex interactions and 2-D effects as devices are scaled deep-submicron. Electrical device simulation and parameter extraction provides a study on how changes in the device structure can influence device operation. The investigation continues to the circuit level through modifications of SPICE model parameters and analog circuit simulation.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127856574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Binkley, D. H. Ihme, C. E. Hopper, B. Blalock, M. Mojarradi
{"title":"Micropower, low-noise, SOI CMOS preamplifiers for deep space missions","authors":"D. Binkley, D. H. Ihme, C. E. Hopper, B. Blalock, M. Mojarradi","doi":"10.1109/UGIM.2003.1225708","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225708","url":null,"abstract":"In this paper, we present two micropower, low-noise 0.35-/spl mu/m partially depleted (PD) silicon-on-insulator (SOI) CMOS preamplifiers designed for the extreme temperature and radiation environment of deep space. PMOS input devices are used for low flicker noise, and these are operated in moderate inversion to achieve high transconductance efficiency and minimum input-referred gate white-noise voltage at low power consumption. Resistive source degeneration, using MOS devices in the deep ohmic region, reduces the effective transconductance of non-input NMOS devices and their normally high flicker noise contributions. The measured input-referred noise for a differential input preamplifier is 275 nV//spl radic/Hz at 1 Hz with a 15-Hz flicker noise corner frequency and white noise floor of 70 nV//spl radic/Hz. The measured input-referred noise for a transimpedance preamplifier is 200 nV//spl radic/Hz at 1 Hz with a 30-Hz flicker noise corner frequency and white noise floor of 35 nV//spl radic/Hz. Each preamplifier operates at a core power dissipation of 6.6 /spl mu/W at a supply voltage of 3.3 V.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126835015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sustaining the Si revolution: challenges and opportunities","authors":"T. King","doi":"10.1109/UGIM.2003.1225685","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225685","url":null,"abstract":"Continual advances in planar process technology enabled MOSFET gate lengths to reach below 100 nm in integrated circuits produced at the turn of the century, and will likely support MOSFET scaling into the sub-10 nm regime within the next 10 years. Gains in circuit performance will not be as straightforward to achieve as had been in the past, however, due to fundamental issues such as statistical dopant fluctuations, parasitic resistance and capacitance, and carrier velocity limits. This paper will first describe how these issues can be mitigated to allow transistor scaling to reach the quantum-mechanical limit. It will then discuss alternative approaches to achieving gains in system performance and cost as the era of transistor scaling draws to a close. Opportunities for research will be described.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115301756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal sensor microfabrication and related undergraduate research projects","authors":"D. Lawrence, S. Hearn, G. R. Taylor","doi":"10.1109/UGIM.2003.1225753","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225753","url":null,"abstract":"We describe the microfabrication and characterization of thermopiles having up to 24 sensing junctions. Chromium-nickel devices were fabricated on glass substrates, and aluminum-silicon devices were processed on silicon wafers. Sensitivities as high as approximately 7 mV//spl square/C were measured for the aluminum-silicon devices. The thermal mass of the sensing region of these devices was reduced by etching a well in the back surface of the silicon substrate, beneath the sensing junctions. The time constants of our fastest sensors were 33 ms. This work represents one example of undergraduate research carried out in our microfabrication laboratory. Other examples are also described, including solid state electrochromic devices, and silicon photovoltaic cells with textured surfaces, conventional metal grid contacts, and transparent conducting oxide contacts.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121520559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","authors":"","doi":"10.1109/UGIM.2003.1225684","DOIUrl":"https://doi.org/10.1109/UGIM.2003.1225684","url":null,"abstract":"The following topics are dealt with: microelectronics research and education partnerships; semiconductor processing; CMOS mixed-signal circuits; SOI mixed-signal circuits; microelectronics education; nano/biotechnology; devices and materials; packaging; silicon-on-insulator devices; MEMS and sensors.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124035796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}