探索最终的低于50纳米的CMOS晶体管结构

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225730

A. Rambhatla, D. Hackler, S. Parke

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引用次数: 0

摘要

在本文中，我们试图从第一性原理来比较研究CMOS晶体管结构，以寻求最终的晶体管结构，这将允许现有的全球CMOS技术基础的进化改进，补充不可避免的革命性CMOS替代技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Quest for the ultimate sub-50 nm CMOS transistor structure

In this paper, we seek to comparatively investigate CMOS transistor structure from first-principles in the quest to find the ultimate transistor structure that will permit evolutionary improvement of the existing worldwide CMOS technology base, complementing the inevitable revolutionary CMOS replacement technologies.

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Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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