Overview of fully depleted silicon-on-insulator (SOI) technology

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225771

P. T. Tran

引用次数: 2

Abstract

This paper examines the advantages and disadvantages of thin-film, fully depleted (FD) silicon-on-insulator (SOI) technology devices compared to bulk devices, describing their desirability and suitability for low-voltage and low-power very large-scale integrated (VLSI) circuits.

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绝缘体上全贫硅(SOI)技术综述

本文研究了薄膜，完全耗尽(FD)绝缘体上硅(SOI)技术器件与体器件相比的优点和缺点，描述了它们对低压和低功耗超大规模集成电路(VLSI)的可取性和适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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