11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)最新文献_第8页

A power IC technology with excellent trench isolation and p-LDMOS transistor through tapered TEOS field oxides 一种通过锥形TEOS场氧化物具有优异沟槽隔离和p-LDMOS晶体管的功率IC技术

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764119

Sang Gi Kim, Jongdae Kim, Q. Song, J. Koo, D. Kim, K. Cho

引用次数: 1

The effect of charge in junction termination extension passivation dielectrics 电荷对结端延伸钝化介质的影响

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764094

J. Trost, R. Ridley, M.K. Khan, T. Grebs, H. Evans, S. Arthur

引用次数: 18

Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed 由GAT和MPS二极管组成的单片集成功率器件，具有提高的开关速度

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764131

Xu Cheng, B. Kang, J. Sin, Zhe Wang, Guozhong Li, Yu Wu

引用次数: 1

Safe operating area considerations in LDMOS transistors LDMOS晶体管的安全工作区域考虑

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764046

P. Hower, J. Lin, S. Haynie, S. Paiva, R. Shaw, N. Hepfinger

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引用次数: 34

An improved power MOSFET using a novel split well structure 一种改进的功率MOSFET，采用一种新颖的分井结构

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764098

J. Zeng, C. F. Wheatley

引用次数: 12

Power management issues for future generation microprocessors 下一代微处理器的电源管理问题

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764036

F. Lee, Xunwei Zhou

引用次数: 27

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics 具有最佳正向特性的1.4 kV, 25a, PT和NPT沟槽igbt

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1900-01-01 DOI: 10.1109/ISPSD.1999.764082

F. Udrea, P.R. Waind, J. Thomson, T. Trajkovic, S.S.M. Chan, S. Huang, G. Amaratunga

引用次数: 6