The effect of charge in junction termination extension passivation dielectrics

Abstract

The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing.