11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)最新文献

High voltage Ni/4H-SiC Schottky rectifiers 高压Ni/4H-SiC肖特基整流器

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764087

R. Chilukuri, B. J. Baliga

引用次数: 10

Ultra-high resolution temperature measurement and thermal management of RF power devices using heat pipes 使用热管的射频功率器件的超高分辨率温度测量和热管理

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764083

Jun He, V. Mehrotra, M. C. Shaw

引用次数: 4

Trend of railway technologies and power semiconductor devices 铁路技术和功率半导体器件的发展趋势

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764032

T. Watanabe

{"title":"Trend of railway technologies and power semiconductor devices","authors":"T. Watanabe","doi":"10.1109/ISPSD.1999.764032","DOIUrl":"https://doi.org/10.1109/ISPSD.1999.764032","url":null,"abstract":"Transportation has a big share of energy consumption, especially automobiles. Railway saves energy in the field of mass freight transportation, commuter services and high-speed medium distance passenger transportation. Shifting transportation media from trucks and automobiles to railways is important for future energy and environmental issues. It is necessary to have high railway productivity to win the competition between transportation media. With regard to high-speed passenger transport, electric multiple units are more advantageous than locomotive hauled trains, and double-deckers have 30% greater productivity than ordinary railway vehicles. Inverters have made great progress due to power semiconductor development. The smaller power convertor offers more passenger room and greater productivity. On-board convertors can be much smaller if we use 3.3 kV and 4.5 kV IGBTs and two level convertors instead of three level ones. Smaller losses and smaller harmonics are expected for these convertors to enable self-cooling and avoid extra measures to satisfy EMC requirements. If 10-40 kV power semiconductors are made, we have the prospect of realizing transformerless railway vehicles for 25 kV AC systems by adding the role of a main transformer of traction circuit to convertors. In addition, electric vehicles with accumulators, hybrid vehicles using both engine and accumulator and cars with fuel cells are discussed for future environment friendly automobiles. Electric traction seems unavoidable for future automobiles, which means a huge market for power convertors and power semiconductor devices in the 21st century.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126476221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

A physics-based model for the avalanche ruggedness of power diodes 功率二极管雪崩坚固性的物理模型

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764089

G. Hurkx, N. Koper

引用次数: 7

Experimental demonstration of 600 V MCCT 600伏MCCT的实验演示

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764130

T. Iwaana, N. Iwamuro, Y. Harada, Y. Seki

引用次数: 0

Fabrication of a double-side IGBT by very low temperature wafer bonding 极低温晶圆键合法制备双面IGBT

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764042

K. Hobart, F. Kub, G. Dolny, M. Zafrani, J. Neilson, J. Gladish, C. McLachlan

引用次数: 12

A simple mobility model for electrons and holes 电子和空穴的简单迁移率模型

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764115

I. Takata

{"title":"A simple mobility model for electrons and holes","authors":"I. Takata","doi":"10.1109/ISPSD.1999.764115","DOIUrl":"https://doi.org/10.1109/ISPSD.1999.764115","url":null,"abstract":"This article reports a trial to find a simple quantitative relation which explains drift mobilities for electrons and holes in various semiconductors on the same point of view as the saturation velocity analysis which was presented at ISPSD'97 by the author (Takata, Proc. ISPSD'97, pp. 133-136, 1997). A newly proposed model was based on the primitive mobility equation (/spl mu//sub d/=q/spl middot//spl tau//sub m//m/sub dr/*) and the factors which determine a momentum relaxation time (/spl tau//sub m/=L/sub m//v/sub eff/) were chosen such that a mean free path (L/sub m/) was equal to the lattice constant (a) times 40 (L/sub m//spl ap/40/spl middot/a) and the effective velocity (v/sub eff/) equalled the thermal velocity (v/sub th/). Then the author tried to find the simplest rule for effective masses (m/sub dr//sup */) to explain the experimental values for electrons and holes in the major indirect-transition-type semiconductors, such as diamond, 4H-SiC, 6H-SiC, 3C-SiC, Si, GaP, AlSb, Ge and GaAs. On many materials, the conductive effective mass (m/sub c//sup */) is fitting for the electron's effective mass (m/sub dr//sup */) and the longitudinal effective mass (m/sub 1//sup */) for the hole's. This model may be useful for evaluation of approximate mobilities for newly developing materials such as SiC or diamond. The author proposes that conventional transport theory has serious problems for such materials, especially in terms of holes. Even if the theory of this paper is not solid, there is room to discuss some new fundamental mechanisms on these subjects.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132961136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

High-performance 13-65 V rated LDMOS transistors in an advanced smart power technology 高性能13- 65v额定LDMOS晶体管采用先进的智能电源技术

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764104

S. Merchant, R. Baird, S. Chang, P. Hui, V. Macary, M.G. Neaves

引用次数: 8

A new trench bipolar junction diode (TBJD) 一种新型沟槽双极结二极管(TBJD)

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764080

B. You, A. Huang, J. Sin

引用次数: 5

New design approach for ultra high power GCT thyristor 超高功率GCT晶闸管的新设计方法

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI: 10.1109/ISPSD.1999.764132

K. Satoh, K. Morishita, N. Hirano, M. Yamamoto, A. Kawakami

引用次数: 22