600伏MCCT的实验演示

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764130

T. Iwaana, N. Iwamuro, Y. Harada, Y. Seki

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引用次数: 0

摘要

本文首次介绍了具有600 V阻断能力的MOS级联可控硅(MCCT)器件的特性。应该指出的是，在表现出与IGBT相当的快速关断速度的同时，可以实现2.0 V的优越导通状态压降。此外，通过应用n/n/sup +/源区结构，MCCT在125/spl℃的高温条件下具有超过16 /spl mu/s的超强抗短路能力和超过660 a /cm2的最大关断能力。

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Experimental demonstration of 600 V MCCT

This paper presents the characteristics of a MCCT (MOS controlled cascode thyristor) device with a blocking capability of 600 V for the first time. It should be noted that a superior on-state voltage drop of 2.0 V can be achieved while exhibiting a fast turn-off speed which is comparable to that of an IGBT. Furthermore, the MCCT shows a superior short circuit withstand capability of more than 16 /spl mu/s and a maximum turn-off capability of over 660 A/cm2 at a high temperature condition of 125/spl deg/C, simultaneously, by the application of an n/n/sup +/ source region structure.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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