一种新型沟槽双极结二极管(TBJD)

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764080

B. You, A. Huang, J. Sin

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引用次数: 5

摘要

本文提出了一种新的功率二极管结构——沟槽双极结二极管(TBJD)。首次证明了利用集成的反向有源晶体管控制二极管阳极注入效率的可行性。反向有源晶体管的基底被TBJD中的深p/sup +/沟槽区域屏蔽，与传统的p-i-n二极管结构相比，实现了优越的动态特性。仿真和实验结果都证明了这种新型结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new trench bipolar junction diode (TBJD)

In this paper, a new power diode structure called the trench bipolar junction diode (TBJD) is proposed. For the first time, the feasibility of controlling the anode injection efficiency of a diode by the action of an integrated reverse active transistor is demonstrated. The base of the reverse active transistor is shielded by a deep p/sup +/ trench region in the TBJD to achieve superior dynamic characteristics compared to the conventional p-i-n diode structure. Both simulation and experimental results are provided to illustrate this novel structure.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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