High-performance 13-65 V rated LDMOS transistors in an advanced smart power technology

Abstract

A high-performance, low cost smart power technology targeting automotive applications in the 13-65 V range is described. The trade-off between on-state specific resistance and off-state breakdown voltage is detailed for four lateral double-diffused MOS structures. The characterization includes the effects of gate length and drift length, and scaling issues related to interconnect metal debiasing. Results compare favorably with competing technologies of higher cost and complexity.