Experimental demonstration of 600 V MCCT

Abstract

This paper presents the characteristics of a MCCT (MOS controlled cascode thyristor) device with a blocking capability of 600 V for the first time. It should be noted that a superior on-state voltage drop of 2.0 V can be achieved while exhibiting a fast turn-off speed which is comparable to that of an IGBT. Furthermore, the MCCT shows a superior short circuit withstand capability of more than 16 /spl mu/s and a maximum turn-off capability of over 660 A/cm2 at a high temperature condition of 125/spl deg/C, simultaneously, by the application of an n/n/sup +/ source region structure.