超高功率GCT晶闸管的新设计方法

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764132

K. Satoh, K. Morishita, N. Hirano, M. Yamamoto, A. Kawakami

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引用次数: 22

摘要

在设计超高功率、大尺寸栅极整流关断晶闸管时，关断能力是一个主要问题。与具有高关断能力的小尺寸gct不同，传统的大尺寸gct的关断能力较低，与其大功率不成比例。在计算机模拟和测试样品评估的帮助下，我们开发了一种具有改进关断能力的超高功率gct的新设计方法。关断仿真表明，大尺寸GCT的低关断能力与GCT芯片设计的不均匀性有关。根据我们的新设计方法优化GCT芯片均匀性，与传统方法相比，可以获得具有更高关断能力的大尺寸GCT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New design approach for ultra high power GCT thyristor

Turn-off capability is a major concern when designing ultra high power, large size GCTs (gate commutated turn-off thyristors). Unlike small size GCTs, which have a high turn-off capability, conventional large size GCTs have a low turn-off capability that is not proportionate to its high power. With the help of computer simulation and test sample evaluation, we developed a new design approach for ultra high power GCTs with improved turn-off capability. Turn-off simulation suggested that the low turn-off capability of large size GCTs is related to the nonuniformity in the GCT chip design. Optimizing the GCT chip uniformity following our new design approach resulted in large size GCTs with higher turn-off capability when compared with the conventional approach.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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