Fabrication of a double-side IGBT by very low temperature wafer bonding

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764042

K. Hobart, F. Kub, G. Dolny, M. Zafrani, J. Neilson, J. Gladish, C. McLachlan

引用次数: 12

Abstract

A bidirectional double-side IGBT has been successfully fabricated by very low temperature direct wafer bonding for the first time. The utility of the second MOS gate to control hole injection is demonstrated. Through optimized switching of the second gate, a 50% decrease in switching loss is observed.

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极低温晶圆键合法制备双面IGBT

利用极低温直接晶圆键合技术，首次成功制备了双向双面IGBT。演示了第二MOS栅极控制孔注入的效用。通过优化第二栅极的开关，观察到开关损耗降低了50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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