{"title":"A physics-based model for the avalanche ruggedness of power diodes","authors":"G. Hurkx, N. Koper","doi":"10.1109/ISPSD.1999.764089","DOIUrl":null,"url":null,"abstract":"The avalanche ruggedness of power diodes is investigated by experiments and numerical device simulations. An analytical model is developed that describes the dependence of the maximum allowable energy during an unclamped inductive switching test on test temperature, diode area, breakdown voltage, hot spots and the critical temperature for the onset of second breakdown.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The avalanche ruggedness of power diodes is investigated by experiments and numerical device simulations. An analytical model is developed that describes the dependence of the maximum allowable energy during an unclamped inductive switching test on test temperature, diode area, breakdown voltage, hot spots and the critical temperature for the onset of second breakdown.