一种改进的功率MOSFET，采用一种新颖的分井结构

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764098

J. Zeng, C. F. Wheatley

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引用次数: 12

摘要

垂直功率mosfet体二极管的特定导通电阻(R/sub sp/)、坚固性和反向恢复电荷(Q/sub rr/)之间的设计权衡通过使用新颖的分井(SW)概念得到了显着改善。该软件结构实现简单，成本低。预计源排除掩码可以被移除。与具有相同设计规则的传统VDMOST相比，SW器件的R/sub sp/降低了15%，Q/sub rr/降低了10%，而器件的坚固性没有下降。此外，预计SW器件将产生更高的热载波可靠性。

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An improved power MOSFET using a novel split well structure

The design trade-offs between the specific on-resistance (R/sub sp/), the ruggedness and the reverse recovery charge (Q/sub rr/) of the body-diode for vertical power MOSFETs has been significantly improved by using a novel split-well (SW) concept. The implementation of the SW structure is straightforward with low cost. It is expected that the source exclusion mask can be removed. When compared to a conventional VDMOST with the same design rules, the SW device provides 15% lower R/sub sp/ and 10% lower Q/sub rr/ without degradation of device ruggedness. In addition, it is expected that the SW device will yield higher hot-carrier reliability.

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来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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