具有最佳正向特性的1.4 kV, 25a, PT和NPT沟槽igbt

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1900-01-01 DOI:10.1109/ISPSD.1999.764082

F. Udrea, P.R. Waind, J. Thomson, T. Trajkovic, S.S.M. Chan, S. Huang, G. Amaratunga

{"title":"具有最佳正向特性的1.4 kV, 25a, PT和NPT沟槽igbt","authors":"F. Udrea, P.R. Waind, J. Thomson, T. Trajkovic, S.S.M. Chan, S. Huang, G. Amaratunga","doi":"10.1109/ISPSD.1999.764082","DOIUrl":null,"url":null,"abstract":"In this paper, we report the development of 1.4 kV 25 A punch-through (PT) and nonpunch-through (NPT) trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for PT nonirradiated devices and 2.1 V for 16 MRad PT irradiated devices. The nonirradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm/sup 2/ at 125 C. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics\",\"authors\":\"F. Udrea, P.R. Waind, J. Thomson, T. Trajkovic, S.S.M. Chan, S. Huang, G. Amaratunga\",\"doi\":\"10.1109/ISPSD.1999.764082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the development of 1.4 kV 25 A punch-through (PT) and nonpunch-through (NPT) trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for PT nonirradiated devices and 2.1 V for 16 MRad PT irradiated devices. The nonirradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm/sup 2/ at 125 C. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在本文中，我们报告了1.4 kV 25a穿通(PT)和非穿通(NPT)沟槽igbt的开发，与先前报道的同类DMOS igbt相比，它们具有超低导通电阻，无锁死操作和非常优越的整体性能。我们已经制造了PT和透明阳极NPT器件，以覆盖广泛的应用，这些应用需要非常低的导通状态损耗或非常快的时间和超低的开关损耗。在标准电流密度为100 A/cm/sup 2/时，PT未辐照器件的最小正向压降为1.1 V，而16 MRad PT辐照器件的最小正向压降为2.1 V。非辐照透明发射极NPT结构典型正向压降为2.2 V，关断时间小于100 ns，关断能量损失为11.2 mW/cm/sup 2/，最大可控电流密度超过1000 a /cm/sup 2/。

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1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

In this paper, we report the development of 1.4 kV 25 A punch-through (PT) and nonpunch-through (NPT) trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for PT nonirradiated devices and 2.1 V for 16 MRad PT irradiated devices. The nonirradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm/sup 2/ at 125 C. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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