由GAT和MPS二极管组成的单片集成功率器件，具有提高的开关速度

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764131

Xu Cheng, B. Kang, J. Sin, Zhe Wang, Guozhong Li, Yu Wu

{"title":"由GAT和MPS二极管组成的单片集成功率器件，具有提高的开关速度","authors":"Xu Cheng, B. Kang, J. Sin, Zhe Wang, Guozhong Li, Yu Wu","doi":"10.1109/ISPSD.1999.764131","DOIUrl":null,"url":null,"abstract":"A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed\",\"authors\":\"Xu Cheng, B. Kang, J. Sin, Zhe Wang, Guozhong Li, Yu Wu\",\"doi\":\"10.1109/ISPSD.1999.764131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764131\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种将栅极相关晶体管(GAT)和合并引脚肖特基二极管(MPS)组合在一起的新型集成功率器件结构。仿真和实验证明，与传统功率双极结晶体管(BJT)和p-i-n二极管组成的传统结构相比，该结构具有更快的二极管恢复速度和更快的晶体管开关速度。这种新结构可以在普通的平面工艺中实现，并且不需要特殊的载流子寿命控制技术(如铂掺杂)，可以以低成本实现快速的开关速度。

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Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed

A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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