电荷对结端延伸钝化介质的影响

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764094

J. Trost, R. Ridley, M.K. Khan, T. Grebs, H. Evans, S. Arthur

{"title":"电荷对结端延伸钝化介质的影响","authors":"J. Trost, R. Ridley, M.K. Khan, T. Grebs, H. Evans, S. Arthur","doi":"10.1109/ISPSD.1999.764094","DOIUrl":null,"url":null,"abstract":"The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"The effect of charge in junction termination extension passivation dielectrics\",\"authors\":\"J. Trost, R. Ridley, M.K. Khan, T. Grebs, H. Evans, S. Arthur\",\"doi\":\"10.1109/ISPSD.1999.764094\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764094\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 18

摘要

在电力器件中，阻塞结的边缘端接对器件的运行和可靠性至关重要。研究了充电对平面> 3000v功率二极管结端延伸钝化薄膜的影响。本研究旨在制定克服高温反向偏压后阻滞能力损失的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The effect of charge in junction termination extension passivation dielectrics

The edge termination of the blocking junction in power devices is critical to the operation and reliability of the device. The influence of charging in the thin films used to passivate the junction termination extension (JTE) in a planar >3000 V power diode has been investigated. This study was used to develop strategies to overcome the loss of blocking capability observed after high temperature reverse bias stressing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

自引率

0.00%

发文量