一种通过锥形TEOS场氧化物具有优异沟槽隔离和p-LDMOS晶体管的功率IC技术

Sang Gi Kim, Jongdae Kim, Q. Song, J. Koo, D. Kim, K. Cho
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引用次数: 1

摘要

提出了一种可重复锥形TEOS氧化物的智能PIC技术,以减少制造工艺步骤,获得低导通电阻的p-LDMOS。与传统工艺相比,可以减少几个工艺步骤。在相同的击穿电压(降低5%)下,该结构的导通电阻提高了35%或更多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A power IC technology with excellent trench isolation and p-LDMOS transistor through tapered TEOS field oxides
A smart PIC technology with the reproducible tapered TEOS oxide has been proposed to reduce the fabrication process steps and obtain p-LDMOS with low on-resistance. Several process steps could be reduced, compared to the conventional process. With a similar breakdown voltage (5% reduction), the on-resistance was improved by 35% or more with the proposed structure.
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